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| BAR 63-02W Silicon PIN Diode * PIN diode for high speed switching of RF signals * Low forward resistance, small capacitance small inductance * Very low capacitance * For frequencies up to 3 GHz 2 1 VES05991 Type BAR 63-02W Marking Ordering Code G Q62702-A1211 Pin Configuration 1=C 2=A Package SCD-80 Maximum Ratings Parameter Diode reverse voltage Forward current Total power dissipation, T S = 115 C Junction temperature Operating temperature range Storage temperature Thermal Resistance Junction - ambient 1) Symbol Value 50 100 250 150 -55 ...+150 -55 ...+150 Unit V mA mW C C VR IF Ptot Tj Top Tstg RthJA RthJS 220 140 K/W Junction - soldering point 1) Package mounted on alumina 15mm x 16.7mm x 0.7mm Semiconductor Group Semiconductor Group 11 Sep-07-1998 1998-11-01 BAR 63-02W Electrical Characteristics at TA = 25 =C, unless otherwise specified. Parameter Symbol Values min. DC characteristics Breakdown voltage typ. 0.95 max. 10 1.2 Unit V(BR) IR VF 50 - V A V I (BR) = 5 A Reverse current VR = 35 V Forward voltage I F = 100 mA AC characteristics Diode capacitance CT 0.3 0.21 0.09 0.3 - pF VR = 0 V, f = 100 MHz VR = 5 V, f = 1 MHz Case capacitance CC rf f = 1 MHz Forward resistance rr 1.2 1 75 0.6 2 s nH I F = 5 mA, f = 100 MHz I F = 10 mA, f = 100 MHz Charge carrier life time I F = 10 mA, I R = 6 mA, I R = 3 mA Series inductance Ls Semiconductor Group Semiconductor Group 22 Sep-07-1998 1998-11-01 BAR 63-02W Forward current IF = f (TA*;TS) *): mounted on alumina 15mm x 16.7mm x 0.7mm 120 mA 5 100 90 80 TS IF 70 60 50 40 30 20 10 0 0 20 40 60 80 TA 100 120 C 150 TA,TS Permissible Pulse Load R thJS = f(t p) Permissible Pulse Load IFmax / IFDC = f(tp) 10 3 10 1 K/W IFmax / IFDC 10 2 - 10 1 0.5 0.2 0.1 0.05 0.02 0.01 0.005 D=0 D=0 0.005 0.01 0.02 0.05 0.1 0.2 0.5 RthJS 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 10 0 -6 10 10 -5 10 -4 10 -3 10 -2 s 10 0 tp tp Semiconductor Group Semiconductor Group 33 Sep-07-1998 1998-11-01 BAR 63-02W Diode capacitance CT = f (V R) f = 1MHz Forward resistance rf = f(IF) f = 100MHz 10 3 Ohm 0.6 pF 10 2 0.4 CT RF 10 1 10 0 10 -1 -2 10 0.3 0.2 0.1 0.0 0 5 10 15 20 V 30 10 -1 10 0 10 1 10 2 mA 10 3 VR IF Forward current IF = f (V F) T A = 25C 10 3 mA 10 2 10 1 IF 10 0 10 -1 10 -2 0.0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 V 1.0 VF Semiconductor Group Semiconductor Group 44 Sep-07-1998 1998-11-01 |
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